BC847BPN

Symbol Micros: TBC847bpn
Contractor Symbol:
Case : SOT363
BC Series 45 V 100 mA NPN/PNP Silicon Dual General Purpose Transistor BC847BPDW1T1G
Parameters
Power dissipation: 400mW
Current gain factor: 450
Cutoff frequency: 100MHz
Manufacturer: NXP
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 45V
Manufacturer:: NXP Manufacturer part number: BC847BPN,115 RoHS Case style: SOT363 t/r Datasheet
In stock:
11790 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2271 0,1078 0,0606 0,0460 0,0413
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Packaging:
3000
Manufacturer:: Nexperia Manufacturer part number: BC847BPN,115 Case style: SOT363  
External warehouse:
1899000 pcs.
Quantity of pcs. 9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0413
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BC847BPN,165 Case style: SOT363  
External warehouse:
1070000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0413
Add to comparison tool
Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BC847BPN,135 Case style: SOT363  
External warehouse:
40000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0413
Add to comparison tool
Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 400mW
Current gain factor: 450
Cutoff frequency: 100MHz
Manufacturer: NXP
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 45V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN/PNP