BC856B GALAXY
Symbol Micros:
TBC856b GAL
Case : SOT23
Transistor PNP; 475; 250mW; 65V; 100mA; 100MHz; -55°C ~ 150°C; Equivalent: BC856B,215; BC856B,235; BC856BLT1G; BC856BLT3G; BC856B RFG; BC856B-7-F; BC856B-13-F; BC856B-TP;
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Power dissipation: | 250mW |
Current gain factor: | 475 |
Manufacturer: | GALAXY |
Cutoff frequency: | 100MHz |
Case: | SOT23 |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 65V |
Power dissipation: | 250mW |
Current gain factor: | 475 |
Manufacturer: | GALAXY |
Cutoff frequency: | 100MHz |
Case: | SOT23 |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 65V |
Operating temperature (range): | -55°C ~ 150°C |
Transistor type: | PNP |
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