BCM856S

Symbol Micros: TBCM856s

125697

TBCM856s

Contractor Symbol:

Case : SOT363

Datasheet

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Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW BCM856SH6327 BCM856SH6327XTSA1

Parameters

Power dissipation:	250mW
Current gain factor:	450
Cutoff frequency:	250MHz
Manufacturer:	Infineon Technologies
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	65V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCM856SH6327 RoHS Case style: SOT363 t/r Datasheet

In stock:

209 pcs.

Quantity of pcs.	5+	20+	100+	309+	1236+
Net price (EUR)	0,2547	0,1281	0,0766	0,0634	0,0566

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Packaging:
309 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCM856SH6327XTSA1 Case style: SOT363  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0566

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	250mW
Current gain factor:	450
Cutoff frequency:	250MHz
Manufacturer:	Infineon Technologies
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	2xPNP

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