BCR08PNH6327 Infineon

Symbol Micros: TBCR08pn
Contractor Symbol:
Case : SOT363
NPN/PNP 50V 170MHz 250mW BCR08PNH6327XTSA1
Parameters
Power dissipation: 250mW
Current gain factor: 70
Cutoff frequency: 170MHz
Manufacturer: Infineon Technologies
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR08PNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1385 0,0658 0,0371 0,0282 0,0252
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BCR08PNH6327XTSA1 Case style: SOT363  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0477
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR08PNH6327XTSA1 Case style: SOT363  
External warehouse:
45000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0491
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 250mW
Current gain factor: 70
Cutoff frequency: 170MHz
Manufacturer: Infineon Technologies
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN/PNP