BCR10PN Infineon Tech

Symbol Micros: TBCR10pn
Contractor Symbol:
Case : SOT363
NPN/PNP 100mA 50V 130MHz 250mW
Parameters
Power dissipation: 250mW
Current gain factor: 30
Cutoff frequency: 130MHz
Manufacturer: Infineon Technologies
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR10PNH6327 RoHS Case style: SOT363 t/r Datasheet
In stock:
2900 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1528 0,0725 0,0408 0,0310 0,0278
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BCR10PNH6327XTSA1 Case style: SOT363  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0477
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR10PNH6327XTSA1 Case style: SOT363  
External warehouse:
18000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0487
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 250mW
Current gain factor: 30
Cutoff frequency: 130MHz
Manufacturer: Infineon Technologies
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN/PNP