BCR112
Symbol Micros:
TBCR112
Case : SOT23
NPN 100mA 50V 200mW 140MHz w/ res. 4.7k+4.7k BCR112E6327, BCR112E6327HTSA1, SP000010747
Parameters
| Power dissipation: | 200mW |
| Current gain factor: | 20 |
| Cutoff frequency: | 140MHz |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR112E6327HTSA1 RoHS
Case style: SOT23t/r
Datasheet
In stock:
22740 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1778 | 0,0844 | 0,0474 | 0,0360 | 0,0323 |
Manufacturer:: Infineon
Manufacturer part number: BCR112E6327HTSA1
Case style: SOT23
External warehouse:
12000 pcs.
| Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0323 |
Manufacturer:: Infineon
Manufacturer part number: BCR112E6327HTSA1
Case style: SOT23
External warehouse:
31500 pcs.
| Quantity of pcs. | 500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0323 |
| Power dissipation: | 200mW |
| Current gain factor: | 20 |
| Cutoff frequency: | 140MHz |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | NPN |
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