BCR162E6327 Infineon

Symbol Micros: TBCR162
Case : SOT23-3
PNP 50V 100mA 200MHz 200mW BCR162E6327HTSA1
Parameters
Power dissipation: 200mW
Cutoff frequency: 200MHz
Current gain factor: 20
Manufacturer: Infineon Technologies
Case: SOT23-3
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR162E6327 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
150 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 3000+
Net price (EUR) 0,0933 0,0368 0,0215 0,0157 0,0143
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Packaging:
3000
Power dissipation: 200mW
Cutoff frequency: 200MHz
Current gain factor: 20
Manufacturer: Infineon Technologies
Case: SOT23-3
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP