BCR162E6327 Infineon

Symbol Micros: TBCR162

109046

TBCR162

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 50V 100mA 200MHz 200mW BCR162E6327HTSA1

Parameters

Power dissipation:	200mW
Current gain factor:	20
Cutoff frequency:	200MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR162E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

150 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0911	0,0360	0,0210	0,0154	0,0140

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	200mW
Current gain factor:	20
Cutoff frequency:	200MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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