BCR162E6327 Infineon
Symbol Micros:
TBCR162
Case : SOT23-3
PNP 50V 100mA 200MHz 200mW BCR162E6327HTSA1
Parameters
Power dissipation: | 200mW |
Cutoff frequency: | 200MHz |
Current gain factor: | 20 |
Manufacturer: | Infineon Technologies |
Case: | SOT23-3 |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Power dissipation: | 200mW |
Cutoff frequency: | 200MHz |
Current gain factor: | 20 |
Manufacturer: | Infineon Technologies |
Case: | SOT23-3 |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | PNP |