BCR169

Symbol Micros: TBCR169

94740

TBCR169

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 100mA 50V 200mW 200MHz w/ res. 47k BCR169E6327 ; BCR169E6327HTSA1

Parameters

Power dissipation:	200mW
Current gain factor:	630
Cutoff frequency:	200MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR169E6327HTSA1 Pbf WSs Case style: SOT23-3 t/r Datasheet

In stock:

499 pcs.

Quantity of pcs.	10+	40+	100+	499+	2495+
Net price (EUR)	0,0878	0,0386	0,0253	0,0162	0,0135

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Packaging:
499 Quantity (multiple: 10)

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• Parameters

Power dissipation:	200mW
Current gain factor:	630
Cutoff frequency:	200MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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