BCR183E6327 Infineon

Symbol Micros: TBCR183
Contractor Symbol:
Case : SOT23-3
PNP 50V 100mA 200MHz 200mW BCR183E6327HTSA1
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Parameters
Power dissipation: 200mW
Cutoff frequency: 200MHz
Current gain factor: 30
Manufacturer: Infineon Technologies
Case: SOT23-3
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR183E6327 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
2880 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 3000+
Net price (EUR) 0,0915 0,0361 0,0211 0,0154 0,0141
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BCR183E6433HTMA1 Case style: SOT23-3  
External warehouse:
20000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0276
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Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR183E6327HTSA1 Case style: SOT23-3  
External warehouse:
12000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0298
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR183E6327HTSA1 Case style: SOT23-3  
External warehouse:
30000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0276
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 200mW
Cutoff frequency: 200MHz
Current gain factor: 30
Manufacturer: Infineon Technologies
Case: SOT23-3
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP