BCR183SH6327 Infineon
Symbol Micros:
TBCR183s
Case : SOT363
2PNP 50V 100mA 200MHz 250mW BCR183E6327XTSA1
Parameters
| Power dissipation: | 250mW |
| Cutoff frequency: | 200MHz |
| Current gain factor: | 30 |
| Manufacturer: | Infineon Technologies |
| Case: | SOT363 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR183SH6327 RoHS
Case style: SOT363 t/r
Datasheet
In stock:
3000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1402 | 0,0665 | 0,0374 | 0,0286 | 0,0254 |
Manufacturer:: Infineon
Manufacturer part number: BCR183SH6327XTSA1
Case style: SOT363
External warehouse:
9000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0568 |
Manufacturer:: Infineon
Manufacturer part number: BCR183SH6327XTSA1
Case style: SOT363
External warehouse:
6000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0527 |
| Power dissipation: | 250mW |
| Cutoff frequency: | 200MHz |
| Current gain factor: | 30 |
| Manufacturer: | Infineon Technologies |
| Case: | SOT363 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | 2xPNP |
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