BCR198E6327 Infineon

Symbol Micros: TBCR198

109030

TBCR198

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 50V 100mA 190MHz 200mW BCR198E6327HTSA1

Parameters

Power dissipation:	200mW
Current gain factor:	70
Cutoff frequency:	190MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR 198 E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0852	0,0335	0,0196	0,0143	0,0131

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Packaging:
3000 Quantity (multiple: 10)

- +

Manufacturer:: Infineon Manufacturer part number: BCR198E6327HTSA1 Case style: SOT23-3  

External warehouse:

45000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0155

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	200mW
Current gain factor:	70
Cutoff frequency:	190MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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