BCR198WH6327 Infineon

Symbol Micros: TBCR198w
Contractor Symbol:
Case : SOT323
PNP 50V 100mA 190MHz 250mW BCR198WE6327XTSA1
Parameters
Power dissipation: 250mW
Current gain factor: 70
Cutoff frequency: 190MHz
Manufacturer: Infineon Technologies
Case: SOT323
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR198WH6327XTSA1 RoHS Case style: SOT323 t/r Datasheet
In stock:
400 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,1150 0,0526 0,0284 0,0212 0,0192
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Packaging:
500
Manufacturer:: Infineon Manufacturer part number: BCR198WH6327XTSA1 Case style: SOT323  
External warehouse:
9000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0315
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR198WH6327XTSA1 Case style: SOT323  
External warehouse:
40000 pcs.
Quantity of pcs. 500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0370
Add to comparison tool
Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 250mW
Current gain factor: 70
Cutoff frequency: 190MHz
Manufacturer: Infineon Technologies
Case: SOT323
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP