BCR35PNH6327XTSA1

Symbol Micros: TBCR35pnh

108786

TBCR35pnh

Contractor Symbol:

Case : SOT363

Datasheet

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NPN/PNP 50 V 100 mA Silicon Digital Transistor Array BCR35PNH6433XTMA1 BCR35PNH6433XT BCR35PNH6327XT BCR35PNH6327XZ BCR35PNH6433XZ

Parameters

Power dissipation:	250mW
Current gain factor:	70
Cutoff frequency:	150MHz
Manufacturer:	Infineon Technologies
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR35PNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

2890 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2166	0,1029	0,0577	0,0440	0,0394

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR35PNH6327XTSA1 Case style: SOT363  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0497

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BCR35PNH6327XTSA1 Case style: SOT363  

External warehouse:

36000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0526

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BCR35PNH6433XTMA1 Case style: SOT363  

External warehouse:

10000 pcs.

Quantity of pcs.	10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0497

Add to comparison tool Add inquiry (RFQ)

Packaging:
10000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	250mW
Current gain factor:	70
Cutoff frequency:	150MHz
Manufacturer:	Infineon Technologies
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN/PNP

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