BCR521E6327

Symbol Micros: TBCR521

113335

TBCR521

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor NPN; Bipolar; 20; 12V; 330mW; 50V; 500mA; 100MHz; -65°C~150°C; Substitute: BCR521E6327HTSA1; BCR521E6327;

Parameters

Power dissipation:	330mW
Current gain factor:	20
Cutoff frequency:	100MHz
Manufacturer:	INFINEON
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR521E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2079	0,1146	0,0759	0,0631	0,0594

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR521E6327HTSA1 Case style: SOT23-3  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0594

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	330mW
Current gain factor:	20
Cutoff frequency:	100MHz
Manufacturer:	INFINEON
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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