BCR583E6327HTSA1

Symbol Micros: TBCR583

113334

TBCR583

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor PNP; 70; 330mW; 50V; 500mA; 150MHz; -65°C ~ 150°C; Replacement: BCR583E6327HTSA1; BCR583; BCR583E6327;

Parameters

Power dissipation:	330mW
Current gain factor:	70
Cutoff frequency:	150MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR583E6327HTSA1 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2608	0,1323	0,0801	0,0636	0,0580

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR583E6327HTSA1 Case style: SOT23-3  

External warehouse:

27000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0580

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	330mW
Current gain factor:	70
Cutoff frequency:	150MHz
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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