BCV27

Symbol Micros: TBCV27 ONS

498398

TBCV27 ONS

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN - Darlington; Bipolar; 20000; 30V; 5V; 220MHz; 1.2A; 350mW; -55°C~150°C;

Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437

Parameters

Power dissipation:	350mW
Current gain factor:	20000
Cutoff frequency:	220MHz
Manufacturer:	ONSEMI
Case:	SOT23
Max. collector current:	1,2A
Max collector-emmiter voltage:	30V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: BCV27 RoHS Case style: SOT23t/r Datasheet

In stock:

2300 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2024	0,0962	0,0541	0,0412	0,0368

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: BCV27 Case style: SOT23  

External warehouse:

99000 pcs.

Quantity of pcs.	3000+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	0,0368

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: BCV27 Case style: SOT23  

External warehouse:

24000 pcs.

Quantity of pcs.	1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	0,0368

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: BCV27 Case style: SOT23  

External warehouse:

39000 pcs.

Quantity of pcs.	3000+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	0,0368

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	350mW
Current gain factor:	20000
Cutoff frequency:	220MHz
Manufacturer:	ONSEMI
Case:	SOT23
Max. collector current:	1,2A
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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