BD681

Symbol Micros: TBD681sgs
Contractor Symbol:
Case : TO126
Technical drawing Add to favourites
Transistor NPN; 750; 40W; 100V; 4A; -65°C ~ 150°C; Substitute: BD683; BD681-ST; BD681G; BD681S; BD681STU;
Parameters
Power dissipation: 40W
Current gain factor: 750
Cutoff frequency: 1MHz
Manufacturer: STMicroelectronics
Case: TO126
Max. collector current: 4A
Max collector-emmiter voltage: 100V
Manufacturer:: ST Manufacturer part number: BD681 RoHS Case style: TO126 Datasheet
In stock:
1250 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 2000+
Net price (EUR) 0,4359 0,2867 0,2065 0,1771 0,1678
Add to comparison tool
Packaging:
50/2000
Power dissipation: 40W
Current gain factor: 750
Cutoff frequency: 1MHz
Manufacturer: STMicroelectronics
Case: TO126
Max. collector current: 4A
Max collector-emmiter voltage: 100V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols