BDP949 INFINEON

Symbol Micros: TBDP949

194649

TBDP949

Contractor Symbol:

Case : SOT223

Datasheet

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Trans GP BJT NPN 60V 3A 5000mW Automotive 4-Pin(3+Tab) SOT-223 T/R BDP949H6327XTSA1 BDP949 BDP 949 H6327 TR BDP949H6327XT

Parameters

Power dissipation:	5W
Current gain factor:	475
Cutoff frequency:	100MHz
Manufacturer:	Infineon Technologies
Case:	SOT223
Max. collector current:	3A
Max collector-emmiter voltage:	60V

All parameters

Manufacturer:: Infineon Manufacturer part number: BDP949H6327XTSA1 Case style: SOT223  

External warehouse:

9700 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3252

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	5W
Current gain factor:	475
Cutoff frequency:	100MHz
Manufacturer:	Infineon Technologies
Case:	SOT223
Max. collector current:	3A
Max collector-emmiter voltage:	60V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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