BF998 smd

Symbol Micros: TBF998

20918

TBF998

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Case : SOT143

Datasheet

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N-MOSFET 2gate 1mA 12V 1GHz

Parameters

Max. drain current:	30mA
Max. power loss:	200mW
Case:	SOT143
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	12V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V

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• Parameters

Max. drain current:	30mA
Max. power loss:	200mW
Case:	SOT143
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	12V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	SMD

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