BFR193E6327HTSA1

Symbol Micros: TBFR193
Contractor Symbol:
Case : SOT23
NPN 12V 0.8A 0.58W Tranz. BFR193E6327HTSA1
Parameters
Power dissipation: 580mW
Current gain factor: 100
Cutoff frequency: 8GHz
Manufacturer: INFINEON
Case: SOT-23
Max. collector current: 80mA
Max collector-emmiter voltage: 20V
Manufacturer:: Infineon Manufacturer part number: BFR193E6327HTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
980 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2569 0,1364 0,1056 0,0976 0,0934
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BFR193E6327HTSA1 Case style: SOT23  
External warehouse:
30000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0934
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BFR193E6327HTSA1 Case style: SOT23  
External warehouse:
4300 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0934
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BFR193E6327HTSA1 Case style: SOT23  
External warehouse:
603000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0934
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 580mW
Current gain factor: 100
Cutoff frequency: 8GHz
Manufacturer: INFINEON
Case: SOT-23
Max. collector current: 80mA
Max collector-emmiter voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN