BFR193WH6327 Infineon

Symbol Micros: TBFR193w
Contractor Symbol:
Case : SOT323
NPN 12V 8GHz 80mA 580mW BFR193WE6727 *OBSOLETE; BFR193WH6327XTSA1
Parameters
Power dissipation: 580mW
Current gain factor: 140
Cutoff frequency: 8GHz
Manufacturer: Infineon Technologies
Case: SOT323
Max. collector current: 80mA
Max collector-emmiter voltage: 12V
Manufacturer:: Infineon Manufacturer part number: BFR193W H6327 RoHS Case style: SOT323 t/r Datasheet
In stock:
2680 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2471 0,1364 0,0907 0,0755 0,0704
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BFR193WH6327XTSA1 Case style: SOT323  
External warehouse:
42000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0704
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BFR193WH6327XTSA1 Case style: SOT323  
External warehouse:
15000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0704
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 580mW
Current gain factor: 140
Cutoff frequency: 8GHz
Manufacturer: Infineon Technologies
Case: SOT323
Max. collector current: 80mA
Max collector-emmiter voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN