BGH50N65HS1 BASiC SEMICONDUCTOR

Symbol Micros: TBGH50N65HS1

502131

TBGH50N65HS1

Contractor Symbol:

Case : Rys.TBGH50N65HS1

Datasheet

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Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W

Parameters

Gate charge:	308nC
Max. dissipated power:	297W
Max. collector current:	50A
Max collector current (impulse):	200A
Forvard volatge [Vgeth]:	4,2V ~ 5,8V
Case:	TO247-3
Manufacturer:	BASiC SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	308nC
Max. dissipated power:	297W
Max. collector current:	50A
Max collector current (impulse):	200A
Forvard volatge [Vgeth]:	4,2V ~ 5,8V
Case:	TO247-3
Manufacturer:	BASiC SEMICONDUCTOR
Collector-emitter voltage:	650V
Operating temperature (range):	-40°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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