BGN40Q120SD BYD

Symbol Micros: TBGN40q120

498218

TBGN40q120

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 80A; 160A; 428W; 5,0V~7,0V; 142nC; -40°C~175°C;

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Parameters

Gate charge:	142nC
Max. dissipated power:	428W
Max. collector current:	80A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	BYD

All parameters

Manufacturer:: BYD Manufacturer part number: BGN40Q120 RoHS Case style: TO247 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,3567	2,9808	2,7577	2,6449	2,5815

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	142nC
Max. dissipated power:	428W
Max. collector current:	80A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	5,0V ~ 7,0V
Case:	TO247
Manufacturer:	BYD
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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