BS107P

Symbol Micros: TBS107
Contractor Symbol:
Case : TO92
N-MOSFET 250mA 200V 350mW *obsolete; LTB:08.05.2015 ; LTS:31.12.2015 ;BS107AG, BS107ARL1G ; BS107P
Parameters
Open channel resistance: 30Ohm
Max. drain current: 120mA
Max. power loss: 500mW
Case: TO92
Manufacturer: DIODES
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: DIODES/ZETEX Manufacturer part number: BS107P RoHS Case style: TO92 Datasheet
In stock:
40 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8348 0,5283 0,4174 0,3797 0,3632
Add to comparison tool
Packaging:
1000
Manufacturer:: DIODES/ZETEX Manufacturer part number: BS107P RoHS Case style: TO92bul Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8348 0,5283 0,4174 0,3797 0,3632
Add to comparison tool
Packaging:
200
Manufacturer:: DIODES/ZETEX Manufacturer part number: BS107P Case style: TO92  
External warehouse:
7891 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3632
Add to comparison tool
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 30Ohm
Max. drain current: 120mA
Max. power loss: 500mW
Case: TO92
Manufacturer: DIODES
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT