BSC016N04LS G

Symbol Micros: TBSC016n04ls

126835

TBSC016n04ls

Contractor Symbol:

Case : TDSON08

Datasheet

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Transistor N-Channel MOSFET; 40V; 20V; 2,3mOhm; 100A; 139W; -55°C ~ 150°C; BSC016N04LSGATMA1

Parameters

Open channel resistance:	2,3mOhm
Max. drain current:	100A
Max. power loss:	139W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC016N04LSGATMA1 RoHS Case style: TDSON08 Datasheet

In stock:

38 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,5992	1,2217	1,0106	0,8864	0,8418

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,3mOhm
Max. drain current:	100A
Max. power loss:	139W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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