BSC016N04LS G
Symbol Micros:
TBSC016n04ls
Case : TDSON08
Transistor N-Channel MOSFET; 40V; 20V; 2,3mOhm; 100A; 139W; -55°C ~ 150°C; BSC016N04LSGATMA1
Parameters
Open channel resistance: | 2,3mOhm |
Max. drain current: | 100A |
Max. power loss: | 139W |
Case: | TDSON08 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | N-MOSFET |
Open channel resistance: | 2,3mOhm |
Max. drain current: | 100A |
Max. power loss: | 139W |
Case: | TDSON08 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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