BSC016N06NS

Symbol Micros: TBSC016n06ns
Contractor Symbol:
Case : TDSON08
Transistor N-Channel MOSFET; 60V; 20V; 2,9mOhm; 100A; 139W; -55°C ~ 150°C;
Parameters
Open channel resistance: 2,9mOhm
Max. drain current: 100A
Max. power loss: 139W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSC016N06NS RoHS Case style: TDSON08 Datasheet
In stock:
64 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 300+
Net price (EUR) 2,5666 2,0361 1,8406 1,7405 1,7103
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: BSC016N06NSATMA1 Case style: TDSON08  
External warehouse:
15000 pcs.
Quantity of pcs. 5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,7103
Add to comparison tool
Packaging:
5000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSC016N06NSATMA1 Case style: TDSON08  
External warehouse:
20000 pcs.
Quantity of pcs. 5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,7103
Add to comparison tool
Packaging:
5000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,9mOhm
Max. drain current: 100A
Max. power loss: 139W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD