BSC018NE2LS Infineon

Symbol Micros: TBSC018ne2ls
Contractor Symbol:
Case : TDSON08
N-MOSFET 25V 29A 1.8mΩ BSC018NE2LSI, BSC018NE2LSATMA1
Parameters
Open channel resistance: 2,3mOhm
Max. drain current: 100A
Max. power loss: 69W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSC018NE2LS RoHS Case style: TDSON08 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,7819 0,4910 0,4072 0,3630 0,3397
Add to comparison tool
Packaging:
100
Manufacturer:: Infineon Manufacturer part number: BSC018NE2LSATMA1 Case style: TDSON08  
External warehouse:
5000 pcs.
Quantity of pcs. 5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3397
Add to comparison tool
Packaging:
5000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,3mOhm
Max. drain current: 100A
Max. power loss: 69W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD