BSC019N02KSG Infineon

Symbol Micros: TBSC019n02ksg

109731

TBSC019n02ksg

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 20V 100A BSC019N02KSGAUMA1

Parameters

Open channel resistance:	3mOhm
Max. drain current:	100A
Max. power loss:	104W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC019N02KSG RoHS Case style: TDSON-8 Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,5173	1,0612	0,9029	0,8261	0,7982

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Packaging:
20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3mOhm
Max. drain current:	100A
Max. power loss:	104W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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