BSC042NE7NS3GATMA1 Infineon

Symbol Micros: TBSC042ne7ns3g

113253

TBSC042ne7ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 75V 100A 4.2mΩ

Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	75V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC042NE7NS3G RoHS Case style: TDSON08 Datasheet

In stock:

5 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,8243	1,4450	1,2309	1,1309	1,0727

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	100A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	75V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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