BSC060N10NS3 G

Symbol Micros: TBSC060n10ns3

57922

TBSC060n10ns3

Contractor Symbol:

Case : TDSON08

Datasheet

Technical drawing Add to favourites

N-MOSFET 90A 100V 125W 0.006Ω

Parameters

Open channel resistance:	11,5mOhm
Max. drain current:	90A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC060N10NS3GATMA1 Case style: TDSON08  

External warehouse:

180000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,6260

Add to comparison tool Add inquiry (RFQ)

Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSC060N10NS3GATMA1 Case style: TDSON08  

External warehouse:

5000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,6521

Add to comparison tool Add inquiry (RFQ)

Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	11,5mOhm
Max. drain current:	90A
Max. power loss:	125W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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