BSC060P03NS3E

Symbol Micros: TBSC060p03ns3e

126887

TBSC060p03ns3e

Contractor Symbol:

Case : TDSON-8

Datasheet

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P-Channel 30V 17.7A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) BSC060P03NS3EGATMA1

Parameters

Open channel resistance:	9,6mOhm
Max. drain current:	100A
Max. power loss:	83W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC060P03NS3EGATMA1 Case style: TDSON-8  

External warehouse:

5000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3238

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Packaging:
5000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	9,6mOhm
Max. drain current:	100A
Max. power loss:	83W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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