BSC060P03NS3E

Symbol Micros: TBSC060p03ns3e

126887

TBSC060p03ns3e

Contractor Symbol:

Case : TDSON-8

Datasheet

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P-Channel 30V 17.7A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) BSC060P03NS3EGATMA1

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Parameters

Open channel resistance:	9,6mOhm
Max. drain current:	100A
Max. power loss:	83W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	9,6mOhm
Max. drain current:	100A
Max. power loss:	83W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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