BSC070N10NS3 G

Symbol Micros: TBSC070n10ns3

126836

TBSC070n10ns3

Contractor Symbol:

Case : TDSON-8

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 14mOhm; 90A; 114W; -55°C ~ 150°C;

Parameters

Open channel resistance:	14mOhm
Max. drain current:	90A
Max. power loss:	114W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC070N10NS3G RoHS Case style: TDSON-8 Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,9385	1,6272	1,4457	1,3348	1,2924

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSC070N10NS3GATMA1 Case style: TDSON-8  

External warehouse:

15000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2924

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Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	14mOhm
Max. drain current:	90A
Max. power loss:	114W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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