BSC120N03MSG INFINEON

Symbol Micros: TBSC120n03msg

113064

TBSC120n03msg

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Datasheet

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N-MOSFET 30V 11A BSC120N03MSGATMA1

Parameters

Open channel resistance:	14mOhm
Max. drain current:	39A
Max. power loss:	28W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC120N03MSGATMA1 Case style: TDSON-8  

External warehouse:

5000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1760

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Packaging:
5000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	14mOhm
Max. drain current:	39A
Max. power loss:	28W
Case:	TDSON-8
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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