BSC12DN20NS3G

Symbol Micros: TBSC12dn20ns3g

194800

TBSC12dn20ns3g

Contractor Symbol:

Case : TDSON08

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 200V; +/-20V; 125mOhm; 11,3A; 50W; -55°C~150°C; Substitute: BSC12DN20NS3GATMA1;

Parameters

Open channel resistance:	125mOhm
Max. drain current:	11,3A
Max. power loss:	50W
Case:	TDSON08
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Infineon Manufacturer part number: BSC12DN20NS3GATMA1 Case style: TDSON08  

External warehouse:

5000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5168

Add inquiry (RFQ)

Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	125mOhm
Max. drain current:	11,3A
Max. power loss:	50W
Case:	TDSON08
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.