BSC190N15NS3G Infineon

Symbol Micros: TBSC190n15ns3g
Contractor Symbol:
Case : TDSON08
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N-MOSFET 150V 50A 125W 19mΩ BSC190N15NS3GATMA1
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Parameters
Open channel resistance: 20mOhm
Max. drain current: 50A
Max. power loss: 125W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 150V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSC190N15NS3GATMA1 RoHS Case style: TDSON08 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 300+
Net price (EUR) 1,8727 1,4869 1,3443 1,2718 1,2485
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Packaging:
20
Open channel resistance: 20mOhm
Max. drain current: 50A
Max. power loss: 125W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 150V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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