BSD214SNH6327 Infineon

Symbol Micros: TBSD214sn

115136

TBSD214sn

Contractor Symbol:

Case : SOT363

Datasheet

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N-MOSFET 20V 1.5A 500mW 140mΩ

Parameters

Open channel resistance:	250mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSD214SNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

17 pcs.

Quantity of pcs.	3+	10+	40+	147+	588+
Net price (EUR)	0,3490	0,2271	0,1672	0,1441	0,1340

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Packaging:
147 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSD214SNH6327XTSA1 Case style: SOT363  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1340

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	250mOhm
Max. drain current:	1,5A
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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