BSD235CH6327XTSA1

Symbol Micros: TBSD235c
Contractor Symbol:
Case : SOT363
Mosfet Array N and P-Channel 20V 950mA, 530mA 500mW Surface Mount PG-SOT363-6
Parameters
Open channel resistance: 2,1Ohm
Max. drain current: 950mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N/P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSD235CH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet
In stock:
3635 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2822 0,1497 0,1160 0,1071 0,1026
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSD235CH6327XTSA1 Case style: SOT363  
External warehouse:
327000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1026
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSD235CH6327XTSA1 Case style: SOT363  
External warehouse:
66000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1026
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSD235CH6327XTSA1 Case style: SOT363  
External warehouse:
3000 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1026
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,1Ohm
Max. drain current: 950mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N/P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD