BSD235NH6327XTSA1

Symbol Micros: TBSD235nh

134192

TBSD235nh

Contractor Symbol:

Case : SOT363

Datasheet

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Transistor N-Channel MOSFET; 20V; -/+12V; 226mOhm; 950mA; 500mW; -55°C~150°C; Substitute: BSD235N H6327; BSD235N H6327; SP000917652;

Parameters

Open channel resistance:	225mOhm
Max. drain current:	950mA
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Transistor type:	MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSD235NH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

1700 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2641	0,1457	0,0967	0,0809	0,0752

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Packaging:
3000 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSD235NH6327XTSA1 Case style: SOT363  

External warehouse:

75000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0752

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	225mOhm
Max. drain current:	950mA
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Transistor type:	MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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