BSD314SPEH6327XTSA1 Infineon

Symbol Micros: TBSD314spe
Contractor Symbol:
Case : SOT363
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P-MOSFET 30V 1.5A 500mW 140mΩ
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Parameters
Open channel resistance: 230mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSD314SPEH6327XTSA RoHS Case style: SOT363 t/r Datasheet
In stock:
80 pcs.
Quantity of pcs. 5+ 20+ 100+ 200+ 1000+
Net price (EUR) 0,2618 0,1428 0,0938 0,0846 0,0746
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Packaging:
200
Open channel resistance: 230mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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