BSD840N

Symbol Micros: TBSD840n

194823

TBSD840n

Contractor Symbol:

Case : SOT363

Datasheet

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Transistor 2xN-Channel MOSFET; 20V; +/-8V; 400mOhm; 880mA; 500mW; -55°C~150°C; Substitute: BSD840NH6327XTSA1; BSD840NH6327;

Parameters

Open channel resistance:	400mOhm
Max. drain current:	880mA
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSD840NH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2229	0,1233	0,0818	0,0684	0,0637

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BSD840NH6327XTSA1 Case style: SOT363  

External warehouse:

1119000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0637

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	400mOhm
Max. drain current:	880mA
Max. power loss:	500mW
Case:	SOT363
Manufacturer:	INFINEON
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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