BSH103 NXP

Symbol Micros: TBSH103
Contractor Symbol:
Case : SOT23
N-MOSFET 30V 850mA 540mW 400mΩ
Parameters
Open channel resistance: 600mOhm
Max. drain current: 850mA
Max. power loss: 750mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: NXP Manufacturer part number: BSH103 RoHS Case style: SOT23t/r  
In stock:
3890 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2783 0,1476 0,1144 0,1057 0,1012
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Packaging:
3000
Manufacturer:: Nexperia Manufacturer part number: BSH103,215 Case style: SOT23  
External warehouse:
75000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1012
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH103,235 Case style: SOT23  
External warehouse:
70000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1012
Add to comparison tool
Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH103,215 Case style: SOT23  
External warehouse:
60000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1012
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 600mOhm
Max. drain current: 850mA
Max. power loss: 750mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD