BSH105

Symbol Micros: TBSH105

20744

TBSH105

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.05A 20V 0.417W 0.2Ω

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Parameters

Open channel resistance:	375mOhm
Max. drain current:	1,05A
Max. power loss:	417mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	20V
Max. drain-gate voltage:	20V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH105,215 RoHS Case style: SOT23t/r  

In stock:

4144 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3305	0,1826	0,1437	0,1329	0,1275

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	375mOhm
Max. drain current:	1,05A
Max. power loss:	417mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	20V
Max. drain-gate voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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