BSH108

Symbol Micros: TBSH108
Contractor Symbol:
Case : SOT23
N-MOSFET 1.9A 0.83W 0.12Ω
Parameters
Open channel resistance: 240mOhm
Max. drain current: 1,9A
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Manufacturer:: NXP Manufacturer part number: BSH108 RoHS Case style: SOT23t/r  
In stock:
360 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2180+
Net price (EUR) 0,2146 0,1184 0,0785 0,0653 0,0613
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Packaging:
2180
Manufacturer:: NXP Manufacturer part number: BSH108 RoHS Case style: SOT23t/r  
In stock:
1500 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2146 0,1189 0,0788 0,0658 0,0613
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Packaging:
3000
Manufacturer:: Nexperia Manufacturer part number: BSH108,215 Case style: SOT23  
External warehouse:
27000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0776
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH108,215 Case style: SOT23  
External warehouse:
51000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0739
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 240mOhm
Max. drain current: 1,9A
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD