BSH114

Symbol Micros: TBSH114
Contractor Symbol:
Case : SOT23-3
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB BSH114,235 BSH114,215
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Parameters
Open channel resistance: 1,15Ohm
Max. drain current: 850mA
Max. power loss: 830mW
Case: SOT23-3
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Manufacturer:: NXP Manufacturer part number: BSH114,215 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
63 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 1,0688 0,7056 0,5807 0,5205 0,5090
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Packaging:
20/200
Open channel resistance: 1,15Ohm
Max. drain current: 850mA
Max. power loss: 830mW
Case: SOT23-3
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD