BSH202

Symbol Micros: TBSH202

58368

TBSH202

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 30V; 30V; 20V; 1,35Ohm; 520mA; 417mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	1,35Ohm
Max. drain current:	520mA
Max. power loss:	417mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V

All parameters

Manufacturer:: NXP Manufacturer part number: BSH202 RoHS Case style: SOT23t/r  

In stock:

300 pcs.

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,2877	0,1842	0,1297	0,1101	0,1047

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Packaging:
300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,35Ohm
Max. drain current:	520mA
Max. power loss:	417mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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