BSH205

Symbol Micros: TBSH205
Contractor Symbol:
Case : SOT23
P-MOSFET 0.75A 12V 0.417W 0.9Ω
Parameters
Open channel resistance: 750mOhm
Max. drain current: 750mA
Max. power loss: 417mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 12V
Max. drain-gate voltage: 12V
Manufacturer:: NXP Manufacturer part number: BSH205G2 RoHS Case style: SOT23t/r  
In stock:
5265 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2618 0,1448 0,0962 0,0802 0,0748
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Packaging:
3000/6000
Manufacturer:: Nexperia Manufacturer part number: BSH205G2R Case style: SOT23  
External warehouse:
30000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0748
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH205G2R Case style: SOT23  
External warehouse:
357000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0748
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH205G2R Case style: SOT23  
External warehouse:
12000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0748
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 750mOhm
Max. drain current: 750mA
Max. power loss: 417mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 12V
Max. drain-gate voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD