BSL211SPH6327 Infineon

Symbol Micros: TBSL211sp

113620

TBSL211sp

Contractor Symbol:

Case : TSOP06

Datasheet

Technical drawing Add to favourites

P-MOSFET 20V 4.7A 2W 67mΩ BSL211SPH6327XTSA1

Parameters

Open channel resistance:	110mOhm
Max. drain current:	4,7A
Max. power loss:	2W
Case:	TSOP06
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSL211SPH6327 RoHS Case style: TSOP06 t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4080	0,2665	0,1910	0,1670	0,1566

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: BSL211SPH6327XTSA1 Case style: TSOP06  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1566

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	110mOhm
Max. drain current:	4,7A
Max. power loss:	2W
Case:	TSOP06
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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