BSO613SPV G Infineon

Symbol Micros: TBSO613spv

113492

TBSO613spv

Contractor Symbol:

Case : SOIC08

Datasheet

Technical drawing Add to favourites

P-MOSFET 60V 3.44A 2.5W 130mΩ

Parameters

Open channel resistance:	130mOhm
Max. drain current:	3,44A
Max. power loss:	2,5W
Case:	SOIC08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BS0613SPV G RoHS Case style: SOIC08t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,8447	0,5305	0,4398	0,3933	0,3677

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	130mOhm
Max. drain current:	3,44A
Max. power loss:	2,5W
Case:	SOIC08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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