BSP299H

Symbol Micros: TBSP299h

170584

TBSP299h

Contractor Symbol:

Case : SOT223-4

Datasheet

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Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 BSP299H6327XUSA1

Parameters

Open channel resistance:	4Ohm
Max. drain current:	400mA
Max. power loss:	1,8W
Case:	SOT223-4
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP299 H6327 RoHS Case style: SOT223-4 t/r Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,4574	1,0188	0,8655	0,7924	0,7665

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4Ohm
Max. drain current:	400mA
Max. power loss:	1,8W
Case:	SOT223-4
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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