BSP317P

Symbol Micros: TBSP317p

40414

TBSP317p

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

P-MOSFET 0.43A 250V 1.8W 4Ω

Parameters

Open channel resistance:	5Ohm
Max. drain current:	430mA
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	250V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSP317PH6327XTSA1 Case style: SOT223  

External warehouse:

27000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2159

Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSP317PH6327XTSA1 Case style: SOT223  

External warehouse:

3000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2073

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	5Ohm
Max. drain current:	430mA
Max. power loss:	1,8W
Case:	SOT223
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	250V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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